16:40 〜 16:55

[C-2-04] Sensitivity Properties of a Direct Conversion Silicon X-ray Sensor with Trench-Structured Photodiodes

^○T. Ariyoshi¹, S. Funaki¹, K. Sakamoto¹, A. Baba¹, Y. Arima¹ (1.Kyushu Inst. of Tech.(Japan))

https://doi.org/10.7567/SSDM.2016.C-2-04