16:40 〜 16:55

[D-2-04] Self-organization of Ge Layers on Si Surfaces at High Temperatures

^○A. Shklyaev^1,2 (1.Inst. of Semiconductor Physics of SB RAS(Russia), 2.Novosibirsk State Univ.(Russia))

https://doi.org/10.7567/SSDM.2016.D-2-04