Investigation of Effects of Inner Stress with Sn Incorporation on Energy Band of Si1–xSn x Using Density Functional Theory and Photoelectron Spectroscopy

Y. Nagae

doi:https://doi.org/10.7567/SSDM.2016.D-2-05

16:55 〜 17:10

[D-2-05] Investigation of Effects of Inner Stress with Sn Incorporation on Energy Band of Si_1–_xSn _x Using Density Functional Theory and Photoelectron Spectroscopy

Y. Nagae¹,^○M. Kurosawa^1,2,3,4, M. Araidai^1,2,3, O. Nakatsuka¹, K. Shiraishi^1,3, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Inst. for Adv. Res., Nagoya Univ.,(Japan), 3.IMaSS, Nagoya Univ.(Japan), 4.JST-PRESTO(Japan))

https://doi.org/10.7567/SSDM.2016.D-2-05

2016 International Conference on Solid State Devices and Materials

[D-2-05] Investigation of Effects of Inner Stress with Sn Incorporation on Energy Band of Si1–xSn x Using Density Functional Theory and Photoelectron Spectroscopy

[D-2-05] Investigation of Effects of Inner Stress with Sn Incorporation on Energy Band of Si_1–_xSn _x Using Density Functional Theory and Photoelectron Spectroscopy