First Principle and Thermodynamic Analysis of MOVPE Growth of GaN and AlN

K. Sekiguchi

doi:https://doi.org/10.7567/SSDM.2016.D-4-02

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

14:00 〜 14:15

[D-4-02] First Principle and Thermodynamic Analysis of MOVPE Growth of GaN and AlN

^○K. Sekiguchi¹, H. Shirakawa¹, K. Chokawa¹, Y. Yamamoto¹, M. Araidai^2,1, Y. Kangawa³, K. Kakimoto³, K. Shiraishi^2,1 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.IMaSS, Nagoya Univ.(Japan), 3.Kyushu Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.D-4-02

▲