14:30 〜 14:45

[D-4-04] Enhanced Photoluminescence from InAs Quantum Dots Monolithically Grown on Si (100) using InGaAs/GaAs dislocation filter layers

^○J. Kwoen¹, K. Watanabe¹, Y. Arakawa¹ (1.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2016.D-4-04