10:00 〜 10:15

[D-5-02] Low Temperature (250℃) Crystallization of Amorphous Ge Thin Film on Insulator through Ag-induced Layer Exchange

^○R. Yoshimine¹, K. Toko¹, T. Suemasu¹ (1.Univ. of Tsukuba(Japan))

https://doi.org/10.7567/SSDM.2016.D-5-02