2016 International Conference on Solid State Devices and Materials
Sep 26, 2016 - Sep 29, 2016 Tsukuba International Congress Center, Tsukuba, Japan
10:30 AM - 10:45 AM
[D-5-04] Thickness-Controlled Low-Temperature (~380℃) Solid-Phase Crystallization of Sn-Doped Poly-Ge/Insulator for High Carrier Mobility (~320 cm2/Vs)
○K. Moto1, T. Sadoh1, Y. Kai1, R. Matsumura1, M. Miyao1 (1.Kyushu Univ.(Japan))
