14:00 〜 14:15

[E-1-02] Study on the Guideline to Control Dry and Wet Oxidation Conditions to Improve 4H-SiC (000-1) C-face MOS Interface Characteristics

^○H. Kajifusa¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2016.E-1-02