9:30 AM - 10:00 AM

[E-3-01(Invited)] Opportunities to Design Thermal Oxidation and Post-Oxidation Processes to Control 4H-SiC MOS Interface Characteristics

^○K. Kita¹, H. Hirai¹, H. Kajifusa¹ (1.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2016.E-3-01