10:15 〜 10:30

[E-3-03] First-principles Study on Carrier Scattering Property at 4H-SiC(0001)/SiO₂

^○T. Ono^1,2, S. Iwase¹, C. J. Kirkham¹ (1.Univ. of Tsukuba(Japan), 2.JST-PRESTO(Japan))

https://doi.org/10.7567/SSDM.2016.E-3-03