10:30 AM - 10:45 AM

[E-3-04] An Extraction Method of Interface State Density near Conduction Band Edge at SiC MOS Interfaces

^○S. Takagi^1,2, M. Takenaka^1,2 (1.Univ. of Tokyo(Japan), 2.JST-CREST(Japan))

https://doi.org/10.7567/SSDM.2016.E-3-04