The Japan Society of Applied Physics

2:00 PM - 2:15 PM

[E-4-02] Analysis of 4H-SiC IGBT Switching in the Presence of Interface Traps using Miller Plateau Characteristics

D. Navarro1, A. Tone2, H. Kikuchihara2, Y. Morikawa1, M. Miura-Mattausch2 (1.Silvaco Japan(Japan), 2.Hiroshima Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.E-4-02