14:15 〜 14:30

[E-4-03] Gate Threshold Voltage Control of C-H Diamond MOSFETs

^○T. Kudo¹, Y. Kitabayashi¹, D. Matsumura¹, Y. Hayashi¹, M. Inaba¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.E-4-03