2:30 PM - 2:45 PM

[E-4-04] H-terminated Diamond Field Effect Transistor with Ferroelectric Gate Insulator

R. Karaya¹, Y. Mori¹, H. Furuichi¹, I. Baba¹, T. Nakajima², N. Tokuda¹,^○T. Kawae¹ (1.Kanazawa Univ.(Japan), 2.Tokyo Univ. of Science(Japan))

https://doi.org/10.7567/SSDM.2016.E-4-04