2:30 PM - 2:45 PM

[G-4-04] Spin Accumulation Up to 10 meV in Si Non-local Devices with MgO/Fe Tunnel Contacts

^○A. M. Spiesser¹, H. Saito¹, Y. Fujita², S. Yamada², K. Hamaya², S. Yuasa¹, R. Jansen¹ (1.AIST(Japan), 2.Osaka Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.G-4-04