Transient Thermal Analysis of Si-based Solar Cell Using Electrical Junction-Temperature Measurement and Impedance Spectroscopy

Y. H. Chin

doi:https://doi.org/10.7567/SSDM.2016.G-6-03

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

11:45 〜 12:00

[G-6-03] Transient Thermal Analysis of Si-based Solar Cell Using Electrical Junction-Temperature Measurement and Impedance Spectroscopy

Y. H. Chin¹, S. J. Wang¹, C. H. Hung¹,^○Y. C. Huang¹, C. H. Wu², N. S. Wu¹, H. P. Yan¹ (1.National Cheng Kung Univ.(Taiwan), 2.Chung Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.G-6-03

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