The Japan Society of Applied Physics

16:10 〜 16:25

[J-2-02] The Physical Origin of Interface Defects and Its Influence on MOSCAP with Magnetron Sputtered MoS2 and HfO2 High-k Gate Dielectric

P. Xia1, S. Wang2, D. Chi2, C. Li3, Z. He3, X. Liu4, K. W. Ang1 (1.National Univ. of Singapore(Singapore), 2.Institute of Materials Research and Engineering(Singapore), 3.South Univ. of Sci. and Tech. of China(China), 4.Shenzhen Univ.(China))

https://doi.org/10.7567/SSDM.2016.J-2-02