The Physical Origin of Interface Defects and Its Influence on MOSCAP with Magnetron Sputtered MoS2 and HfO2 High-k Gate Dielectric

P. Xia

doi:https://doi.org/10.7567/SSDM.2016.J-2-02

4:10 PM - 4:25 PM

[J-2-02] The Physical Origin of Interface Defects and Its Influence on MOSCAP with Magnetron Sputtered MoS₂ and HfO₂ High-k Gate Dielectric

^○P. Xia¹, S. Wang², D. Chi², C. Li³, Z. He³, X. Liu⁴, K. W. Ang¹ (1.National Univ. of Singapore(Singapore), 2.Institute of Materials Research and Engineering(Singapore), 3.South Univ. of Sci. and Tech. of China(China), 4.Shenzhen Univ.(China))

https://doi.org/10.7567/SSDM.2016.J-2-02

2016 International Conference on Solid State Devices and Materials

[J-2-02] The Physical Origin of Interface Defects and Its Influence on MOSCAP with Magnetron Sputtered MoS2 and HfO2 High-k Gate Dielectric

[J-2-02] The Physical Origin of Interface Defects and Its Influence on MOSCAP with Magnetron Sputtered MoS₂ and HfO₂ High-k Gate Dielectric