16:25 〜 16:40

[J-2-03] Using Self-Assembled Monolayers for Selective Metal Removing and Ultrathin Gate Dielectrics in MoS₂ Field-Effect Transistors

^○W. Du¹, T. Kawanago¹, S. Oda¹ (1.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2016.J-2-03