09:30 〜 09:45

[M-3-01] Time Response of Gate-Controlled Metal-Insulator Transitions in Ultrathin VO₂ Channel

^○T. Yajima¹, T. Nishimura¹, A. Toriumi¹ (1.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2016.M-3-01