Coherence Properties and Charge Stability of Shallow Implanted Nitrogen Vacancy Centers in <sup>12</sup>C enrichied Diamond

H. Yamano

doi:https://doi.org/10.7567/SSDM.2016.M-4-01

13:30 〜 13:45

[M-4-01] Coherence Properties and Charge Stability of Shallow Implanted Nitrogen Vacancy Centers in ¹²C enrichied Diamond

^○H. Yamano¹, K. Kato¹, T. Kageura¹, M. Inaba¹, T. Okada¹, I. Higashimata¹, M. Haruyama^2,3, T. Tanii¹, S. Onoda², W. Kada³, O. Hanaizumi³, T. Teraji⁴, J. Isoya⁵, H. Kawarada^1,6 (1.Waseda Univ.(Japan), 2.National Inst. fot Quantum and Radiological Sci. and Tech.(Japan), 3.Gunma Univ.(Japan), 4.NIMS(Japan), 5.Univ. of Tsukuba(Japan), 6.Kagami Memorial Res. Inst. For Materials Sci. and Tech.(Japan))

https://doi.org/10.7567/SSDM.2016.M-4-01

2016 International Conference on Solid State Devices and Materials

[M-4-01] Coherence Properties and Charge Stability of Shallow Implanted Nitrogen Vacancy Centers in 12C enrichied Diamond

[M-4-01] Coherence Properties and Charge Stability of Shallow Implanted Nitrogen Vacancy Centers in ¹²C enrichied Diamond