13:30 〜 14:00

[N-1-01(Invited)] Compositionally Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors with 500-GHz f_T and BV_CEO > 5V

^○N. Kashio¹, T. Hoshi¹, K. Kurishima¹, M. Ida¹, H. Matsuzaki¹ (1.NTT Corp.(Japan))

https://doi.org/10.7567/SSDM.2016.N-1-01