The Japan Society of Applied Physics

2:00 PM - 2:15 PM

[N-1-02] Contact resistivity to C-doped (In)GaAsSb with Ti/Pt/Au and Pt/Ti/Pt/Au

T. Hoshi1, N. Kashio2, Y. Shiratori1, H. Sugiyama1, K. Kurishima1, M. Ida1, H. Matsuzaki1 (1.NTT Device Tech. Labs.(Japan), 2.NTT Device Innovation Center(Japan))

https://doi.org/10.7567/SSDM.2016.N-1-02