AlGaN Etching-induced Electron Traps in GaN Channel of Schottky Barrier Diodes

P. Ferrandis

doi:https://doi.org/10.7567/SSDM.2016.N-2-04

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

16:55 〜 17:10

[N-2-04] AlGaN Etching-induced Electron Traps in GaN Channel of Schottky Barrier Diodes

^○P. Ferrandis¹, M. Charles², Y. Baines², J. Buckley², G. Garnier², C. Gillot², G. Reimbold² (1.CEA-LETI, Univ. of Toulon(France), 2.CEA-LETI(France))

https://doi.org/10.7567/SSDM.2016.N-2-04

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