The Japan Society of Applied Physics

16:55 〜 17:10

[N-2-04] AlGaN Etching-induced Electron Traps in GaN Channel of Schottky Barrier Diodes

P. Ferrandis1, M. Charles2, Y. Baines2, J. Buckley2, G. Garnier2, C. Gillot2, G. Reimbold2 (1.CEA-LETI, Univ. of Toulon(France), 2.CEA-LETI(France))

https://doi.org/10.7567/SSDM.2016.N-2-04