14:00 〜 14:15

[N-4-02] Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al₂O₃/AlGaN/GaN Structures

^○Z. Yatabe¹, J. T. Asubar², Y. Nakamura¹, T. Hashizume³ (1.Kumamoto Univ.(Japan), 2.Univ. of Fukui(Japan), 3.Hokkaido Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.N-4-02