The Japan Society of Applied Physics

14:30 〜 14:45

[N-4-04(Late News)] Direct Carrier Number Measurement Method to Evaluate Current Collapse of GaN HEMT device

K. Oasa1, A. Yoshioka1, Y. Saito1, T. Kikuchi2, T. Ohguro1, T. Hamamoto1, T. Sugiyama1 (1.TOSHIBA Corp. Storage & Electronic Dev. Solutions Co.(Japan), 2.TOSHIBA Corp. Manufac. Eng. Center(Japan))

https://doi.org/10.7567/SSDM.2016.N-4-04L