Direct Carrier Number Measurement Method to Evaluate Current Collapse of GaN HEMT device

K. Oasa

doi:https://doi.org/10.7567/SSDM.2016.N-4-04L

2:30 PM - 2:45 PM

[N-4-04(Late News)] Direct Carrier Number Measurement Method to Evaluate Current Collapse of GaN HEMT device

^○K. Oasa¹, A. Yoshioka¹, Y. Saito¹, T. Kikuchi², T. Ohguro¹, T. Hamamoto¹, T. Sugiyama¹ (1.TOSHIBA Corp. Storage & Electronic Dev. Solutions Co.(Japan), 2.TOSHIBA Corp. Manufac. Eng. Center(Japan))

https://doi.org/10.7567/SSDM.2016.N-4-04L

2016 International Conference on Solid State Devices and Materials

[N-4-04(Late News)] Direct Carrier Number Measurement Method to Evaluate Current Collapse of GaN HEMT device