09:30 〜 10:00

[N-5-01(Invited)] Planer Diamond P-channel MOSFETs with Breakdown Voltage V_B > 1.8kV and High Drain Current Density by 2DHG

^○H. Kawarada¹, Y. Kitabayashi¹, M. Syamsul N. S. B. ¹, M. Shibata¹, D. Matsumura¹, T. Kudo¹, A. Hiraiwa¹ (1.Waseda Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.N-5-01