11:45 AM - 12:00 PM

[N-6-02] Vertical MOSFET using C-H Diamond with Trench-channel

^○T. Muta¹, T. Saito¹, M. Inaba¹, D. Matsumura¹, T. Kudo¹, Y. Kitabayashi¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.N-6-02