2:00 PM - 2:20 PM

[O-1-02] Impact of Ozone Post Oxidation to the Electrical Properties of HfO₂/Al₂O₃/GeO_x/Ge pMOSFETs

^○R. Zhang¹, X. Tang¹, X. Yu¹, J. Li¹, Y. Zhao¹ (1.Zhejiang Univ.(China))

https://doi.org/10.7567/SSDM.2016.O-1-02