HSQ Lithography for Nanowire First Integration: an Interesting Alternative for Gate Last Fabrication of Sub-7nm Stacked Nanowire FETs.

L. Gaben

doi:https://doi.org/10.7567/SSDM.2016.O-3-03

10:20 〜 10:40

[O-3-03] HSQ Lithography for Nanowire First Integration: an Interesting Alternative for Gate Last Fabrication of Sub-7nm Stacked Nanowire FETs.

^○L. Gaben^1,2,3, S. Pauliac², J. -A. Dallery⁴, J. Bustos¹, R. Dechanoz², B. Hemard¹, L. Koscianski², X. Bossy¹, M. -P. Samson¹, S. Barraud², S. Monfray¹, F. Boeuf¹, T. Skotnicki¹, F. Balestra³, M. Vinet² (1.STMicroelectronics(France), 2.CEA-LETI(France), 3.IMEP-LAHC(France), 4.Vistec Electron Beam GmbH(Germany))

https://doi.org/10.7567/SSDM.2016.O-3-03

2016 International Conference on Solid State Devices and Materials

[O-3-03] HSQ Lithography for Nanowire First Integration: an Interesting Alternative for Gate Last Fabrication of Sub-7nm Stacked Nanowire FETs.