14:10 〜 14:30

[O-4-03] Tunneling Electro-resistance Effect in Ultra-thin Ferroelectric HfO₂ Junctions

^○X. Tian¹, S. Shibayama^1,2, T. Nishimura¹, T. Yajima¹, S. Migita³, A. Toriumi¹ (1.Univ. of Tokyo(Japan), 2.JSPS(Japan), 3.AIST(Japan))

https://doi.org/10.7567/SSDM.2016.O-4-03