Novel GeO<sub>x</sub> Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation

K. Shiraga

doi:https://doi.org/10.7567/SSDM.2016.PS-1-09

15:00 〜 17:00

[PS-1-09] Novel GeO_x Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation

^○K. Shiraga¹, J. Miyahara², G. Nakamura¹, Y. Fujino¹, K. Akiyama¹, K. Tapily³, T. Harada¹, E. Hara¹, A. Tanihara¹, N. Yamamoto¹, Y. Hirota¹, T. Kaitsuka¹, T. Morimoto¹, K. Hasebe¹ (1.Tokyo Electron Ltd.(Japan), 2.Tokyo Electron Yamanashi Ltd.(Japan), 3.TEL Technology Center(USA))

https://doi.org/10.7567/SSDM.2016.PS-1-09

2016 International Conference on Solid State Devices and Materials

[PS-1-09] Novel GeOx Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation

[PS-1-09] Novel GeO_x Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation