The Japan Society of Applied Physics

15:00 〜 17:00

[PS-1-13(Late News)] Heavy Sb-doping for Poly-GeSn on Insulator Using Pulsed Laser Annealing in Water

K. Takahashi1,2, M. Kurosawa1,3,4, H. Ikenoue5, M. Sakashita1, O. Nakatsuka1, S. Zaima1,3 (1.Grad. Sch. of Engineering, Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan), 4.JST-PRESTO(Japan), 5.Kyushu Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-1-13L