2016 International Conference on Solid State Devices and Materials
Sep 26, 2016 - Sep 29, 2016 Tsukuba International Congress Center, Tsukuba, Japan
3:00 PM - 5:00 PM
[PS-1-14(Late News)] Schottky-barrier-height Reduction for n-Si and n-Ge by Insertion of Tungsten Silicide and Germanide Films Chemically Synthesized using Gas-phase Reactions
○N. Okada1,2, N. Uchida2, T. Kanayama2 (1.JST-PRESTO(Japan), 2.AIST(Japan))
