Study of Post-growth Se-annealing on the Properties of CuGaSe<sub>2-</sub>layers Grown by Three-stage Evaporation Process

M. Islam

doi:https://doi.org/10.7567/SSDM.2016.PS-10-15-04

15:00 〜 17:00

[PS-15-03] Study of Post-growth Se-annealing on the Properties of CuGaSe_2-layers Grown by Three-stage Evaporation Process

^○M. Islam¹, A. Uedono¹, T. Sakurai¹, C. Hugenschmidt², W. Egger³, R. Scheer⁴, A. Dalla⁴, R. Krause-Rehberg⁴, K. Akimoto¹ (1.Univ. of Tsukuba(Japan), 2.Tech. Univ. Munchen(Germany), 3.Univ. der Bundeswehr München(Germany), 4.Martin Luther Univ. Halle(Germany))

https://doi.org/10.7567/SSDM.2016.PS-10-15-04

2016 International Conference on Solid State Devices and Materials

[PS-15-03] Study of Post-growth Se-annealing on the Properties of CuGaSe2-layers Grown by Three-stage Evaporation Process

[PS-15-03] Study of Post-growth Se-annealing on the Properties of CuGaSe_2-layers Grown by Three-stage Evaporation Process