Effect of Chemical Surface Modification on Cell/Graphene Gate Transistor

N. Nishi

doi:https://doi.org/10.7567/SSDM.2016.PS-11-03

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

15:00 〜 17:00

[PS-11-03] Effect of Chemical Surface Modification on Cell/Graphene Gate Transistor

^○N. Nishi¹, K. Nishimura¹, K. Tsushima¹, M. Sota¹, X. Chen¹, T. Murakami¹, Y. Miyazawa², T. Kajisa², M. Kato¹, R. Kometani¹, S. Chiashi¹, S. Maruyama¹, T. Sakata¹ (1.Univ. of Tokyo(Japan), 2.PROVIGATE Inc.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-11-03

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