The Japan Society of Applied Physics

11:06 AM - 11:09 AM

[PS-11-03] Effect of Chemical Surface Modification on Cell/Graphene Gate Transistor

N. Nishi1, K. Nishimura1, K. Tsushima1, M. Sota1, X. Chen1, T. Murakami1, Y. Miyazawa2, T. Kajisa2, M. Kato1, R. Kometani1, S. Chiashi1, S. Maruyama1, T. Sakata1 (1.Univ. of Tokyo(Japan), 2.PROVIGATE Inc.(Japan))