11:06 〜 11:09
[PS-11-03] Effect of Chemical Surface Modification on Cell/Graphene Gate Transistor
○N. Nishi1, K. Nishimura1, K. Tsushima1, M. Sota1, X. Chen1, T. Murakami1, Y. Miyazawa2, T. Kajisa2, M. Kato1, R. Kometani1, S. Chiashi1, S. Maruyama1, T. Sakata1
(1.Univ. of Tokyo(Japan), 2.PROVIGATE Inc.(Japan))