The Japan Society of Applied Physics

15:00 〜 17:00

[PS-13-01] Thickness-Dependent Flatband Voltage Shift in MOSCAP with MoS2 and High-k Gate Dielectric

R. Yang1, J. Cai2, S. Wang2, D. Chi2, K. W. Ang1 (1.National Univ. of Singapore(Singapore), 2.Institute of Materials Research and Engineering(Singapore))

https://doi.org/10.7567/SSDM.2016.PS-13-01