Thickness-Dependent Flatband Voltage Shift in MOSCAP with MoS<sub>2</sub> and High-<i>k</i> Gate Dielectric

R. Yang

doi:https://doi.org/10.7567/SSDM.2016.PS-13-01

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

15:00 〜 17:00

[PS-13-01] Thickness-Dependent Flatband Voltage Shift in MOSCAP with MoS₂ and High-k Gate Dielectric

^○R. Yang¹, J. Cai², S. Wang², D. Chi², K. W. Ang¹ (1.National Univ. of Singapore(Singapore), 2.Institute of Materials Research and Engineering(Singapore))

https://doi.org/10.7567/SSDM.2016.PS-13-01

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2016 International Conference on Solid State Devices and Materials

[PS-13-01] Thickness-Dependent Flatband Voltage Shift in MOSCAP with MoS2 and High-k Gate Dielectric

[PS-13-01] Thickness-Dependent Flatband Voltage Shift in MOSCAP with MoS₂ and High-k Gate Dielectric