15:00 〜 17:00

[PS-13-04] High-Mobility and Low-Carrier-Density Sputtered-MoS₂ Film by Low-Temperature Forming-Gas Annealing for 3D-IC

^○J. Shimizu¹, T. Ohashi¹, K. Matsuura¹, I. Muneta¹, K. Kakushima¹, K. Tsutsui¹, H. Wakabayashi¹ (1.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2016.PS-13-04