15:00 〜 17:00

[PS-13-08] Growth of Graphene/3C-SiC (111)/4H-SiC (0001) by a Sublimation Technique with a Vertical Infrared-Lamp Annealer

^○Y. Sekine¹, K. Kumakura¹, H. Hibino^1,2 (1.NTT BRL(Japan), 2.Kwansei Gakuin Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-13-08