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[PS-13-15(Late News)] First-Principles Device Simulations of All Two-Dimensional Material Tunneling Field-Effect Transistors

^○M. Ohfuchi¹, T. Ozaki² (1.Fujitsu Labs. Ltd.(Japan), 2.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2016.PS-13-15L