2016 International Conference on Solid State Devices and Materials
Sep 26, 2016 - Sep 29, 2016 Tsukuba International Congress Center, Tsukuba, Japan
11:00 AM - 11:03 AM
[PS-13-01] Thickness-Dependent Flatband Voltage Shift in MOSCAP with MoS2 and High-k Gate Dielectric
○R. Yang1, J. Cai2, S. Wang2, D. Chi2, K. W. Ang1 (1.National Univ. of Singapore(Singapore), 2.Institute of Materials Research and Engineering(Singapore))
