11:09 〜 11:12
[PS-13-04] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC
○J. Shimizu1, T. Ohashi1, K. Matsuura1, I. Muneta1, K. Kakushima1, K. Tsutsui1, H. Wakabayashi1
(1.Tokyo Tech(Japan))