The Japan Society of Applied Physics

11:09 AM - 11:12 AM

[PS-13-04] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC

J. Shimizu1, T. Ohashi1, K. Matsuura1, I. Muneta1, K. Kakushima1, K. Tsutsui1, H. Wakabayashi1 (1.Tokyo Tech(Japan))