11:21 〜 11:24 [PS-13-08] Growth of Graphene/3C-SiC (111)/4H-SiC (0001) by a Sublimation Technique with a Vertical Infrared-Lamp Annealer ○Y. Sekine1, K. Kumakura1, H. Hibino1,2 (1.NTT BRL(Japan), 2.Kwansei Gakuin Univ.(Japan))
