Drain-Extended FinFET Technology for RF Power Applications

B. Y. Chen

doi:https://doi.org/10.7567/SSDM.2016.PS-14-01

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

15:00 〜 17:00

[PS-14-01] Drain-Extended FinFET Technology for RF Power Applications

^○B. Y. Chen^1,2, K. M. Chen¹, C. S. Chiu¹, G. W. Huang^1,2, H. C. Chen¹, C. C. Chen¹, F. K. Hsueh¹, M. C. Chen¹, E. Y. Chang² (1.National Nano Device Labs.(Taiwan), 2.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-14-01

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